产品介绍


PRODUCT DESCRIPTION

With the development of the semiconductor industry, the process size of wafer manufacturing has been continuously reduced to 2nm or even lower. High-precision, responsive and repeatable gas flow control methods are crucial in the wafer processing process.

With the advent of small flow control, short process times, and continuous plasma processes, high-end MFCs are struggling to meet the accuracy, stabilization time, and repeatability requirements required to ensure high throughput and match reaction chambers.

With the advent of small flow control, short process times and continuous plasma processes, high-end MFCs are struggling to meet the accuracy, stabilization time and repeatability requirements required to ensure high throughput and match the reaction chamber.

The MFC of Pioneer Fluid paves the way for the future of gas flow control. The product combines the high-precision MFM system with control valve technology and is patented. As a result, the MFC of Pioneer Fluid achieves an order of magnitude improvement in key flow indicators, leading the existing MFC technology and can be applied to advanced wafer manufacturing processes.


PRODUCT FEATURES

The MFC of Pioneer Fluid has a patented dual-valve control design that supports extremely high-precision and extremely wide-range flow measurement. Our MFC uses pressure sensors and position sensors to automatically monitor, measure, and control gas flow more accurately and quickly.

With real-time flow calibration capability

The MFC performs a robust flow monitoring function while in operation. This unique feature enables highly accurate, NIST-traceable flow measurement during operation and significantly reduces downtime.


EXTREMELY SHORT RESPONSE TIME

The MFC of Pioneer Fluid has the shortest response time among similar products of flow controller: the stabilization time after changing the gas flow setting is less than 100 milliseconds (refer to the figure below)


INSENSITIVE TO PRESSURE AND TEMPERATURE

The Pioneer Yuanchuang Fluid MFC product has a unique position control valve design.This design makes the MFC unaffected by upstream and downstream pressure or temperature changes.

The MFC does not need to consider the temperature coefficient, because the highly sensitive sensor will monitor the pressure and temperature of the measured gas at a frequency of once per millisecond, and the MFC control system will directly control the valve to move to the correct opening position


产品参数


Mass Flow Controller Model

V100

V100T

V100S

performance

Range

0.1 - 2000 sccm

Flow accuracy

The accuracy at the set value under actual gas conditions is ±0.5%: 0.1 - 20 sccm; 1 − 200 sccm; 5− 1000 sccm; 10 − 2000 sccm

Response time

≤100 ms (10% − 100% F.S.); ≤300 ms (0.5% - 10% F.S.)*

≤50 ms (10% − 100% F.S.)

Sealing

≤ 1E-9 atm.cc/sec (He)

Valve leakage rate

0.01 sccm, 0.1 sccm, 0.5 sccm, 1.0 sccm

Repeatability

The accuracy at the set value is±0.2% (0.5%-100% F.S.)

Working conditions


Upstream pressure

standard: 100 − 300kPaG (14.5 − 43.5 psig)

low-pressure gasC4H9F, SiH2Cl2, C3H10Si, BCl3, C4F6, C4F6-q, C4F8, C5F8, SiCl4 and WF6,Inlet pressure range can be as low as-81 kPaG (-    11.7 psig)

Please refer to the Gas Bin Parameters table on pages 5 and 6 for specific ranges.

Downstream pressure

Vacuum to 53 kPa (0 − 400 Torr)

Compressive strength

2.07 MPaG (300 psig)

Design pressure (burst pressure)

2.65 MPaG (385 psig)

Operating temperature

15−50°C

15-70°C

15−50°C

Material

Gas path surface

Semi F20 compliant316 SS

Surface treatment

Average Ra value is 5 µin

Seals

Metal (PCTFE optional)

Communication circuit

EtherCAT

24 VDC

DeviceNet

11 − 24 VDC, 5 W

Analog and RS-485

± 15 VDC, 150 mA

Inrush Current

<200 mA

* The setpoint hold time during analog control is 60 milliseconds and does not include the response time of the device as stated in this manual. When operating using analog control, the minimum sensitivity of the MFC setpoint is ±50mV, but flow accuracy is not affected. The measured setpoint and its corresponding flow feedback may differ from the required setpoint by this amount (±50mV). In order to keep the device input value consistent with the controller output value, we recommend analog calibration.


PRODUCT DESCRIPTION CODE


coding

Interpretation

Options

Option explanation

I

model

V100

Standard gas flow controller

V100T

Gas flow controller suitable for 70°C working environment and HF gas

V100S

Gas flow controller with reduced response time to 50ms

II

Special applications

XX

Standard applications

LP

Low pressure gas*

III

Configuration

C

Standard Bins (calibrated with N2)

X

Preset gas

IV

Gas or standard Bin

XXXX XXXX

Semiconductor specialty gas code and range

PS01-020C

Lead Yuanchuang Fluid Standard Bin 01 0.1-20 sccm N2

PS01-200C

Pioneer Fluid Standard Bin 02 21-200 sccm N2 **

PS01-001L

Pioneer Fluid Standard Bin 03 201-1000 sccm N2 **

PS04-002L

Pioneer Fluid Standard Bin 04 1001-2000 sccm N2 **

V

Pipe interface and shell width

01

VCR 1.125"

02

C-Seal 1.125"

03

W-Seal 1.125"

06

VCR 1.125“, PCTFE valve seat

07

C-Seal 1.125", PCTFE valve seat

08

W-Seal 1.125", PCTFE valve seat

09

VCR 1.125", Only PCTFE is used in MFM valve seats

10

C-Seal 1.125", Only PCTFE is used in MFM valve seats

11

W-Seal 1.125", Only PCTFE is used in MFM valve seats

VI

Valve status

C

Normally Closed

VII

Downstream pressure environment

V

vacuum

A

Normal pressure - This option does not support low pressure gas delivery, and the inlet pressure must be ≥60psia

VIII

Communication/power supply interface

model

I/O

Connectors

Power On

Status

Full scale setting

Poll I/O Instance

I/O status switching polling

Signal

Delay

(ms)

Baud rate

Mac

ID

send

take over

DA

DeviceNet

5 Pin Micro

Idle

Count

Integer

6000h

2

7

Executing

0

500KB

63

DB

DeviceNet

5 Pin Micro

Idle

Count

Integer

6000h

21

7

Executing

0

500KB

63

DC

DeviceNet

5 Pin Micro

Idle

Count

Integer

6000h

2

8

Executing

0

500KB

63

DD

DeviceNet

5 Pin Micro

Idle

Count

Integer

6000h

21

8

Executing

0

500KB

63

DE

DeviceNet

5 Pin Micro

Idle

Count

Integer

6000h

6

8

Executing

0

500KB

63

DF

DeviceNet

5 Pin Micro

Idle

Count

Integer

6000h

22

7

Executing

0

500KB

63

DG

DeviceNet

5 Pin Micro

Idle

Count

Integer

6000h

3

7

Executing

0

500KB

63

DH

DeviceNet

5 Pin Micro

Idle

Count

Integer

7FFFh

3

7

Executing

0

500KB

63

DI

DeviceNet

5 Pin Micro

Idle

SCCM

Float

6000h

14

19

Executing

0

500KB

63

DJ

DeviceNet

5 Pin Micro

Idle

SCCM

Float

6000h

23

20

Executing

0

500KB

63

DK

DeviceNet

5 Pin Micro

Idle

SCCM

Float

7FFFh

13

19

Executing

0

500KB

63

DL

DeviceNet

5 Pin Micro

Idle

Count

Integer

7FFFh

6

8

Executing

0

500KB

63

DM

DeviceNet

5 Pin Micro

Idle

Count

Integer

6000h

2

7

Executing

0

500KB

63

DN

DeviceNet

5 Pin Micro

Idle

Count

Integer

7FFFh

22

7

Executing

0

500KB

63

DO

DeviceNet

5 Pin Micro

Idle

Count

Integer

6000h

22

8

Executing

0

500KB

63

DP

DeviceNet

5 Pin Micro

Idle

Count

Integer

7FFFh

3

7

Executing

500 ms

500KB

63

DQ

DeviceNet

5 Pin Micro

Idle

Count

Integer

7FFFh

1

8

Executing

0

500KB

63

DR

DeviceNet

5 Pin Micro

Idle

Count

Integer

603d

22

8

Executing

0

500KB

63

EA

EtherCAT

Comm: RJ45

Pwr: 5 pin Nano

INIT

NA

NA

NA

NA

NA

NA

NA

NA

0

Analog DB9 Pin-Out

model

I/O

Connectors

Valve

Override

Traffic

Feedback

power supply

Flow rate

Set point

Signal ground

RS 485

Test Point

+

General

-

+

-

AA

Analog

9-Pin D

1

2

3

4

5

6

7

8

9

NA

AB

Analog

9-Pin D

1

2

3

4

5

6

7, 8

NA

NA

9

AC

Analog

20-pin Honda

14

3

4

2

16

11

12

8

9

NA

AD

Analog

20-pin Honda

14

3

4

2

16

5

12

8

9

NA

AG

Analog

Card Edge–RJ11

J

3

4

2

F

A

B+C+10

3, 4

2, 3

NA

AH

Analog

DB9 to DB15

NA

NA

7

5

5

8

NA

NA

NA

NA

AK

Analog

20-pin Honda

1

2

3

4

5

6

7, 8

NA

NA

NA

AL

Analog

Card Edge

NA

3

4

2

F

A

B+C

NA

NA

NA

AM

Analog

Card Edge – Purge

Enabled

D

3

4

2

F

A

B+C

NA

NA

NA

RA

RS-485

9-Pin D

NA

NA




NA

NA




RB

RS-485

9-Pin D

NA

NA




NA

NA




RC

RS-485

9-Pin D, RJ45

NA

NA




NA

NA




IX

Special Requests

XXXX

Customer special requirement code

*: -0113

Expanded maximum full scale settings for Ar, N2, F2, N2O, O2, and 20% F2 in Ar at 3000 sccm to allow use of Bin 4. Inlet pressure range is 35.3 psig - 43.5 psig

**: -0126

When the inlet pressure is at least 35.3 psig, the following gases can be measured at a higher maximum flow rate: C2F6, CF4, CH2F2, CH3F, CHF3, Cl2, COS, COS-s, and SF6.

*Required for low-pressure gases: BCl3, C3F6, C3H2F6, C3H10Si, C4F6, C4F6-q, C4F8, C4H2F6, C4H9F, C5F8, SiH2Cl2, ClF3, SiCl4, and WF6.

** Not applicable when selecting Special Application LP (Low Pressure Gas).

***1.5" W-Seal is not suitable for the 20 sccm MFC (Bin 1).

If you are interested in other gases and/or configurations, please contact our sales representatives.


GAS PARAMETER TABLE


gas

Gas No.

Bin 1: 20 sccm

Bin 2: 200 sccm

Bin 3: 1000 sccm

Bin 4: 2000 sccm

Input Gas

Pressure Range 

(psig)

Maximum Downstream

Gas Pressure

(Torr)

Minimum

Flow

Full scale setting

Minimum

Flow

Full scale setting

Minimum

Flow

Full scale setting

Minimum

Flow


Full scale setting

Min

Max

Min

Max

Min

Max

Min

Max

Air

8

0.1

6

20

1

21

200

5

201

1000

10

1001

2000

14.5 - 43.5

400

Ar

4

0.1

6

20

1

21

200

5

201

1000

10

1001

2000/3000

14.5/35.3 - 43.5*

400

BCl3

70

0.1

6

10

1

11

100

5

101

500

-

-


0.3 - 8.2

400

C2F6

118

0.1

6

20

1

21

200

5

201

1000


10

1001

1000/2000

14.5/35.3 - 43.5**

400

C2F4O

400

0.1

6

20

1

21

200

5

201

1000

-

-

-

14.5 - 43.5

400

C2H2F4

156

0.1

6

20

1

21

100

5

101

1000

10

1001

2000

14.5 - 43.5

400

C2H 3F3

348

0.1

6

10

1

11

100

5

101

500

10

501

1000

14.5 - 43.5

400

C2H6

54

0.1

6

20

1

21

100

5

101

1000

10

1001

2000

14.5 - 43.5

400

C2H6O

73

0.1

6

20

1

21

100

5

101

1000

10

1001

2000

14.5 - 43.5

400

C3F6

138

0.1

6

20

1

21

200

5

201

500

-

-

-

3.3 - 43.5

400

C3F8

128

0.1

6

20

1

21

200

5

201

1000

-

-

-

14.5 - 43.5

400

C3H2F4

393

0.1

6

20

1

21

200

5

201

1000

10

1001

2000

14.5 - 43.5

400

C3H2F6

267

0.1

6

10

1

11

100

5

101

500

-

-

-

0.3 - 25

400

C3H6

61

0.1

6

20

1

21

200

5

201

1000

10

1001

2000

14.5 - 43.5

400

C3H8

89

0.1

6

20

1

21

100

5

101

1000

10

1001

2000

14.5 - 43.5

400

C3H8O

187

0.1

6

10

1

11

100

5

101

500

10

501

1000

14.5 - 43.5

400

C3H 10Si

(TMS)

190

0.1

6

20

1

21

200

5

201

500

-

-

-

3.3 - 7.2

400

C4F6

270

0.1

6

10

1

11

100

5

101

500

-

-

-

0.3 - 22.6

400

C4F6-q

297

0.1

6

10

1

11

100

5

101

500

-

-

-

0.3 - 15.9

400

C4F8

129

0.1

6

20

1

21

200

5

201

500

-

-

-

3.3 - 29.2

400

C4F8-i

236

-

6

20

1

21

200

5

201

500

-

-

-

0.3 - 30

400

C4H 10

117

0.1

6

10

1

11

100

5

101

500

10

501

1000

0.3 - 22

400

C4H2F6

402

0.1

6

10

1

11

100

5

101

500

-

-

-

0.3 - 8

400

C5F8

266

0.1

6

10

1

11

100

5

101

500

-

-

-

(-3.7) – (-0.2)

Vacuum

CF3I

360

0.1

6

20

1

21

200

5

201

500

10

501

1000

14.5/35.3 - 43.5*

400

CF4

63

0.1

6

20

1

21

200

5

201

1000

10

1001

1000/2000

14.5/35.3 - 43.5**

400

CH2F2

160

0.1

6

20

1

21

200

5

201

1000

10

1001

1500/2000

14.5/35.3 - 43.5**

400

CH 3F

33

0.1

6

20

1

21

200

5

201

1000

10

1001

1500/2000

14.5/35.3 - 43.5**

400

CHF3

49

0.1

6

20

1

21

200

5

201

1000

10

1001

1200/2000

14.5/35.3 - 43.5**

400

CH4

28

0.1

6

20

1

21

200

5

201

1000

10

1001

2000

14.5 - 43.5

400

ClF3

77

0.1

6

10

1

21

100

5

101

500

-

-

-

0.3 - 12

400

Cl2

19

0.1

6

20

1

21

200

5

201

1000

10

1001

1500/2000

14.5/35.3 - 43.5**

400

CO

9

0.1

6

20

1

21

200

5

201

1000

10

1001

2000

14.5 - 43.5

400

CO 2

25

0.1

6

20

1

21

200

5

201

1000

10

1001

2000

14.5 - 43.5

400

COS

34

0.1

6

20

1

21

200

5

201

1000

10

1001

1500/2000

14.5/35.3 - 43.5**

400

COS -

Special

5022

0.1


6

20

1

21

200

5

201

1000

10

1001

1500/2000

14.5/35.3 - 43.5**

400

F2

18

0.1

6

20

1

21

200

5

201

1000

10

1001

2000/3000

14.5/35.3 - 43.5**

400

GeH4

43

0.1

6

20

1

21

100

5

101

1000

10

1001

2000

14.5 - 43.5

400

H2

7

0.1

6

20

1

21

200

5

201

1000

10

1001

2000

14.5 - 43.5

400

HBr

10

0.1

6

20

1

21

200

5

201

1000

-

-

-

14.5 - 43.5

400

HCl

11

0.1

6

20

1

21

200

5

201

1000

10

1001

2000

14.5 - 43.5

400

He

1

0.1

6

20

1

21

200

5

201

1000

10

1001

2000

14.5 - 43.5

400


Standard application code examples

I

II

III

IV

V

VI

VII

VIII

IX

V100

XX

X

0004-500C

02

C

V

DA

XXXX


Blank Model Code Example

I

II

III

IV

V

VI

VII

VIII

IX

V100

XX

C

PS02-200C

03

C

V

DI

XXXX

Low-Pressure Gas Application Code Example

I

II

III

IV

V

VI

VII

VIII

IX

V100

LP

X

0266-500C

01

C

V

AA

XXXX


gas

Gas No.

Bin 1: 20 sccm

Bin 2: 200 sccm

Bin 3: 1000 sccm

Bin 4: 2000 sccm

Input Gas

Pressure Range 

(psig)

Maximum Downstream

Gas Pressure

(Torr)

Minimum

Flow

Full scale setting

Minimum

Flow

Full scale setting

Minimum

Flow

Full scale setting

Minimum

Flow

Full scale setting

Min

Max

Min

Max

Min

Max

Min

Max

Kr

5

0.1

6

20

1

21

200

5

201

1000

10

1001

2000

14.5 - 43.5

400

N2

13

0.1

6

20

1

21

200

5

201

1000

10

1001

2000/3000

14.5/35.3 - 43.5*

400


N2O

27

0.1

6

20

1

21

200

5

201

1000

10

1001

2000/3000

14.5/35.3 - 43.5*

400

Ne

2

0.1

6

20

1

21

200

5

201

1000

10

1001

2000

14.5 - 43.5

400

NF3

53

0.1

6

20

1

21

200

5

201

1000

10

1001

2000

14.5 - 43.5

400

NH3

29

0.1

6

20

1

21

200

5

201

1000

10

1001

2000

14.5 - 43.5

400

O2

15

0.1

6

20

1

21

200

5

201

1000

10

1001

2000/3000

14.5/35.3 - 43.5*

400

PF3

62


0.1

6

20

1

21

200

5

201

1000


10


1001

2000

14.5 - 43.5

400

SF6

110


0.1

6

20

1

21

200

5

201

1000


10


1001

2000

14.5/35.3 - 43.5**

400

Si2H6

97


0.1

6

20

1

21

200

5

201

1000


10


1001

1500

14.5 - 43.5

400

SiCl4

108

-

-

-

-

-

-

1

10

100

-

-

-

(-11.7)- (-10.1)

Vacuum

SiF4

88

-

6

20

1

21

200

5

201

1000

-

-

-

14.5 - 43.5

400

SiH2Cl2

67

0.1

6

20

1

21

200

5

201

1000

10

1001

2000

3.3 - 13.6

400

SiH4

39

0.1

6

20

1

21

200

5

201

1000

10

1001

2000

14.5 - 43.5

400

SO2

32

0.1

6

20

1

21

200

5

201

1000

10

1001

2000

14.5 - 43.5

400

WF6

121

0.1

6

10

1

11

100

5

101

500

-

-

-

(-2.7) - 7.0

Vacuum

Xe

6

0.1

6


10

1

11

100

5

101

500

-

-

-

14.5 - 43.5

400

5% B2H6

in Ar

615

0.1

6

20

1

21

200

5

201

1000

10

1001

2000

14.5 - 43.5

400

5% B2H6

in H2

722

0.1

6

20

1

21

200

5

201

1000

10

1001

2000

14.5 – 43.5

400

5% B2H6

in N2

654

0.1

6

20

1

21

200

5

201

1000

10

1001

2000

14.5 - 43.5

400

6% B2H6

in N2

927

0.1

6

20

1

21

200

5

201

1000

10

1001

2000

14.5 - 43.5

400

10% B2 H6

in N2

666

0.1

6

20

1

21

200

5

201

1000

10

1001

2000

14.5 - 43.5

400

2.7% C2 H4

in He

897

0.1

6

20

1

21

200

5

201

1000

10

1001

2000

14.5 - 43.5

400

3% C2 H4

in He

878

0.1

6

20

1

21

200

5

201

1000

10

1001

2000

14.5 - 43.5

400

30% C2 H4

in He

946

0.1

6

20

1

21

200

5

201

1000

10

1001

2000

14.5 - 43.5

400

3% H2 in

N2

597

0.1

6

20

1

21

200

5

201

1000

10

1001

2000

14.5 - 43.5

400

4% H2 in

N2

607

0.1

6

20

1

21

200

5

201

1000

10

1001

2000

14.5 - 43.5

400

20% F2 in

Ar

980

0.1

6

20

1

21

200

5

201

1000

10

1001

2000/3000

14.5/35.3 - 43.5*

400

20% O2 in

He

536

0.1

6

20

1

21

200

5

201

1000

10

1001

2000

14.5 - 43.5

400

30% O2 in

He

604

0.1

6

20

1

21

200

5

201

1000

10

1001

2000

14.5 - 43.5

400

5% PH3 in

H2

709

0.1

6

20

1

21

200

5

201

1000

10

1001

2000

14.5 - 43.5

400

50% PH3

in SiH4

632

0.1

6

20

1

21

200

5

201

1000

10

1001

2000

14.5 - 43.5

400

20% SiH4

in He

529

0.1

6

20

1

21

200

5

201

1000

10

1001

2000

14.5 - 43.5

400

N2 Cal

Atm

0

0.1

6

20

1

21

200

5

201

1000

10

1001

2000

45.3 - 75.3

760

Note: The maximum inlet pressure for non-low vapor pressure gases flowing into vacuum up to 400°F is 58.2 psia (401.3 kPaA). When performing verification tests with atmospheric pressure gases, the inlet pressure must be greater than 60 psia.

For low-pressure gases such as C3H2F6, C3H10Si, C4H2F6, C5F8, SiCl4, BCl3, C4F6,

C4F8, and WF6, an LP-MFC is required. The inlet pressures listed in the table are at an operating temperature of 25°C. Gas performance may not meet requirements for flow rates outside this temperature range. For SiCl4, the minimum flow rate is 1 sccm, provided the pressure requirements are met. If you require other configurations, please contact our sales representatives. *For SF6, CF4, CF3I, CH2F2, CH3F, Cl2, COS, COS-Special, and C2F4, a Customer Special Request (CSR126) is required, and for the specified higher full-scale flow rates, the minimum inlet pressure is 35.3 psig.


Standard application code examples

I

II

III

IV

V

VI

VII

VIII

IX

V100

XX

X

0004-500C

02

C

V

DA

XXXX


Blank Model Code Example

I

II

III

IV

V

VI

VII

VIII

IX

V100

XX

C

PS02-200C

03

C

V

DI

XXXX


Low-Pressure Gas Application Code Example

I

II

III

IV

V

VI

VII

VIII

IX

V100

LP

X

0266-500C

01

C

V

AA

XXXX


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